报告摘要：
基于原子层状二维材料及相关异质结构的电子器件近年来受到了广泛的研究关注。其独特的电学性质和异质集成的可行性，为
各种范德华异质结提供了前所未有的机遇。我们从载流子速度和工作频率两个方面研究了黑磷和二硫化钼的性能改善，展示了基
于二硫化钼的高频晶体管以及工作在千兆赫兹范围内的高速电路，获得了最高振荡频率的记录。短沟道BP晶体管的空穴速度高达
1.5x107cm/s，并预测了最终缩放沟道长度下接近弹道传输极限。此外，横向异质结的带隙工程已被应用于可重构逻辑操作的多功
能性，显示出未来电子器件的巨大潜力。我们还系统地研究了超薄氧化铟锡氧化物在高性能电子器件中的应用。
Electronic devices based on atomic layered two-dimensional materials and related heterostructures have recently attracted
great research attention due to their unique electronic properties and the feasibility of hybrid integration, which provide the
unprecedented opportunities for various van der Waals heterojunctions. We have studied the performance improvement based
on black phosphorus and molybdenum disulfide from the carrier velocity and operating frequency. High frequency transistor and
circuits operating at gigahertz range based on molybdenum disulfide are demonstrated with record high maximum oscillation
frequency. High hole velocity of up to 1.5 x 107 cm/s has been demonstrated for short channel BP transistors and transport
approaching ballistic limit are predicted for ultimately scaled channel length. Moreover, bandgap engineering using lateral
heterojunctions has been carried out with multifunctionality for reconfigurable logic operations, showing great promise for future
electronics. Ultrathin indium tin oxide has been also systematically investigated for high performance electronics with high on off
rate and frequency response.
报告人介绍：
吴燕庆，北京大学研究员。2009年在美国普渡大学获得博士学位。博士毕业后曾在IBM沃森研究中心担任研究员及华中科技大
学教授。围绕后摩尔新材料电子器件与电路开展了多项原创性工作。近五年来作为通讯作者在包括Nature Electronics Nature
Materials, Nature Nanotechnology, Nature Communications, Science Advances等顶级国际学术期刊与IEDM在内的国际会议上发表论文
50余篇。论文总他引次数超过5500余次，h因子31。应邀在多个国际会议上作邀请报告。
Wu Yanqing is a professor at Peking University. He received the Ph.D. degree at Purdue University in 2009. After graduation,
he served as a researcher in IBM Watson research center and professor of Huazhong University of Science and Technology. He
has carried out a number of original works on electronic devices and circuits of post Moore new materials. In the past five years,
as a corresponding author, he has published more than 50 papers in top international academic journals including Nature
Electronics Materials, Nature Nanotechnology, Nature Communications, Science Advances and top international conferences
including IEDM. The total number of other citations is more than 5500, and the H factor is 31. He was invited to give invited
reports at many international conferences.
