网站旧版 | 学校首页 | 中文版 | English

刘璐

作者: 时间:2017-03-18 点击数:

姓 名:刘璐

职称:讲师

专业方向:微电子学系

个人简介:

姓名:刘璐

职称:讲师/硕士生导师/工学博士

实验室:西七楼509(微电子学系)

邮箱:liulu@hust.edu.cn

电话:027-87556734

学习工作经历:

2008年本科毕业于华中科技大学电子科学与技术系,并以优异成绩保送本系微电子学与固体电子学专业免试研究生,2009年转为硕博连读博士研究生,在攻读博士学位期间,主要从事高k栅堆栈电荷陷阱型MONOS存储器的研究工作,并3次赴香港大学进行合作研究。作为技术骨干参与并承担的科研项目有:国家自然科学基金—小尺寸低压高速长保持力电荷陷阱型悬浮栅存储器的研究;博士后科学基金项目—新型双隧道层纳米晶悬浮栅存储器研究;香港政府研究基金与香港大学发展基金—MONOS电荷陷阱型存储器研究。在Applied Physics Letters,Thin Solid Films等国际高水平学术期刊上发表论文十余篇。2013年3月于华中科技大学光学与电子信息学院微电子学与固体电子学专业获得博士学位后留校任教。

主讲课程:

微电子器件与IC设计(本科生)

研究方向:

非挥发性半导体存储器、Si/Ge/化合物半导体为基MOS场效应晶体管

主要科研项目:

博士点基金,No. 20130142120005,2014年1月~2016年12月(第一)

自主创新基金,No. 2013QN037,2013年5月~2014年12月(第一)

国家自然科学基金青年基金,No. 61404055,2015年1月~2017年12月(第一)

学术成就和学术兼职:

1、L. Liu, J. P. Xu*, J. X. Chen, P. T. Lai, “Improved Characteristics for MOHOS Memory with Oxygen-Rich GdO as Charge Storage Layer annealed by NH3”, Applied Physics A, on line, 2013

2、L. Liu, J. P. Xu*, F. Ji, J. X. Chen, P. T. Lai, “Improved Charge-Trapping Properties of TiON/HfON Dual Charge Storage Layer by Tapered Band Structure”, Applied Physics Letters , 101(13), 133503, 2012.

3、L. Liu, J. P. Xu*, F. Ji, J. X. Chen, P. T. Lai, “Improved Memory Characteristics by NH3-Nitrided GdO as Charge Storage Layer for Nonvolatile Memory Applications”, Applied Physics Letters,101(3), 033501, 2012.

4、L. Liu, J. P. Xu*, J. X. Chen, X. D. Huang, P. T. Lai, “Ultranthin HfON/SiO2Dual Tunneling Layer for Improving the Electrical Properties of Metal-Oxide-Nitride-Oxide- Silicon Memory”, Thin Solid Films, 524, 263-267, 2012.

5、L. Liu, J. P. Xu*, X. D. Huang, P. T. Lai, “A Novel MONOS Memory with High-k HfLaON as Charge-Storage Layer”, IEEE Transactions onDevice and Materials Reliability,11(2), 244-247, 2011.

6、L. S. Wang,L. Liu, J. P. Xu*, S. Y. Zhu, Y. Huang, P. T. Lai, “Electrical properties of HfTiON gate-dielectric GaAs metal-oxide-semiconductor capacitor with AlON as interlayer”, IEEE Transactions on Electron Devices, 61(3), 742-746, 2014.

7、X. D. Huang,L. Liu, J. P. Xu, P. T. Lai*, “Improved charge-trapping properties of HfYON film for nonvolatile memory applications in comparison with HfON and Y2O3films”, Applied Physics Letters, 99(11), 112903-112905, 2011.

8、X. D. Huang,L. Liu, J. P. Xu, P. T. Lai*, “Improved performance of yttrium-doped Al2O3as inter-poly dielectric for flash-memory applications”, IEEE Transactions onDevice and Materials Reliability,11(3), 490-494, 2011.

9、朱剑云,刘璐,李育强,徐静平*,退火工艺对LaTiON和HfLaON存储层MONOS存储器特性的影响,物理学报,62(3), 038501-6,2013

CV:

liu Lu

Title: Lecturer

Phone: 86-027-87556764

Email: liulu@hust.edu.cn

Academic Areas: Nonvolatile semiconductor memory; High-k dielectric; Si-, Ge-, GaAs-based MOS field effect transistor

As a lecturer at school of Optical and Electronic information, Huazhong University of Science & Technology Graduate, Liu Lu is mainly in engaged in research work of nonvolatile semiconductor storage materials and devices, including Si-based SONOS charge-trapping memory, GaAs MOS-based quantum dot memory. As next-generation application of the traditional floating-gate flash memory, the conventional SiO2 and Si3N4 are substituted by the high-k dielectrics and Compound semiconductor material, and hence optimization of the material, structure and fabricating processes of its blocking layer, charge storage layer and tunneling layer will be the main approach of improving performances of charge-trapping memory. Theoretically, an analytical model of the charge-trapping memory reliability is established. The correctness and accuracy of the model are confirmed by good agreement of the simulated results with experimental data. More than fifteen papers have been published in Applied Physics Letters and other well-known international journals.

Academic Degrees

PhD in Microelectronics and Solid State Electronics,2013,Huazhong University of Science & Technology Graduate, School of Optical and Electronic information;

B. E. 2008, Huazhong University of Science & Technology, Department of Electronic Science & Technology.

Professional Experience

Huazhong University of Science & Technology, School of Optical and Electronic information, Lecturer(2013-present);

Selected Publications

· Improved Characteristics for MOHOS Memory with Oxygen-Rich GdO as Charge Storage Layer annealed by NH3,Applied Physics A, on line, 2013

· Improved Charge-Trapping Properties of TiON/HfON Dual Charge Storage Layer by Tapered Band Structure, Applied Physics Letters , 101(13), 133503, 2012.

· Improved Memory Characteristics by NH3-Nitrided GdO as Charge Storage Layer for Nonvolatile Memory Applications,Applied Physics Letters, 101(3), 033501, 2012.

· Ultranthin HfON/SiO2 Dual Tunneling Layer for Improving the Electrical Properties of Metal-Oxide-Nitride-Oxide- Silicon Memory, Thin Solid Films, 524, 263-267, 2012.

· A Novel MONOS Memory with High-k HfLaON as Charge-Storage Layer, IEEE Transactions on Device and Materials Reliability, 11(2), 244-247, 2011.

· Electrical properties of HfTiON gate-dielectric GaAs metal-oxide-semiconductor capacitor with AlON as interlayer, IEEE Transactions on Electron Devices, 61(3), 742-746, 2014.

· Improved charge-trapping properties of HfYON film for nonvolatile memory applications in comparison with HfON and Y2O3 films, Applied Physics Letters, 99(11), 112903, 2011.

· Nitrided SrTiO3 as charge-trapping layer for nonvolatile memory applications, Applied Physics Letters, 98(24), 242905, 2011.

· Improved performance of yttrium-doped Al2O3 as inter-poly dielectric for flash-memory applications, IEEE Transactions on Device and Materials Reliability, 11(3), 490-494, 2011.

Working Papers

Selected Cases

Awards and Honors

Courses Taught

· Microelectronic devices and integrated circuit design

Centers/Programs

· The Doctoral Fund of Ministry of Education of China, No. 20130142120005

· The Fundamental Research Funds for the Central Universities, No. 2013QN037

In The Media

华中科技大学  光学与电子信息学院  联系电话:027-87558726  邮编:430074 地址:中国•湖北省武汉市珞喻路1037号 华中科技大学南五楼六楼