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李祎

作者: 时间:2017-03-18 点击数:

姓 名:李祎

职称:讲师

专业方向:微电子学系

个人简介:

职称:讲师、硕士生导师

系:微电子学系

研究所:信息存储材料及器件研究所(缪向水教授团队)

联系方式:

电话:027-87792692

Email: liyi@hust.edu.cn

办公地点:武汉光电国家实验室B407 & F105

招收研究生:每年拟招收工学硕士及工程硕士各1名。热烈欢迎具有微电子、材料、物理相关背景的积极、乐观、进取的学生报考。

热烈欢迎学有余力的优秀本科生加入团队参与科学研究。

学习工作经历:

2005年至2009年 华中科技大学电子科学与技术专业本科生;

2009年至2010年 华中科技大学微电子学与固体电子学专业硕士研究生;

2010年至2014年3月 华中科技大学微电子学与固体电子学专业博士研究生;

2014年4月至2015年2月华中科技大学光学与电子信息学院研究助理;

2016年6月至2016年8月台湾中山大学物理学系访问学者;

2015年3月至现在 华中科技大学光学与电子信息学院讲师。

学科专业/研究方向:

1. 微电子学与固体电子学专业/微电子材料与器件方向;

2. 电子信息材料与元器件专业/信息存储材料与器件方向;

主讲课程:

1. 《化合物半导体材料与器件》

2. 《微纳器件分析技术》

研究概况:

主要针对忆阻器(Memristor)、阻变存储器(Resistive Random Access Memory, RRAM)等新型半导体器件,研究其物理工作机制和性能调控方法,开发其非易失性信息存储(Nonvolatile Memory)、类脑神经形态计算(Brain-Inspired Neuromorphic Computing)、非易失性逻辑运算(Nonvolatile Logic computing)等新兴功能及应用,发展存储与计算融合的非冯·诺依曼计算原理和架构。在ACS Applied Materials & Interfaces、Advanced Electronic Materials, Scientific Reports, Applied Physics Letters, Journal of Applied Physics等国际期刊发表论文10余篇;申请国际发明专利及国内发明专利20余项,其中已授权美国专利3项。获2013年度博士研究生国家奖学金,2015年度湖北省优秀博士学位论文。

科研项目情况:

主持国家自然科学基金青年基金、中国科学院开放课题等项目,参与承担了国家重点研发计划、863重大项目子课题、国家国际科技合作项目、国家自然科学基金面上项目等项目。

现阶段在研的部分重要项目:

1. 碲化物忆阻突触器件机制及联想学习功能研究,国家自然科学基金青年科学基金项目,2016-2018,主持。

2. 基于忆阻器的非易失性状态逻辑运算方法与实现研究,国家自然科学基金面上项目2017-2020,参与。

3. 面向三维集成的阻变存储器纳米尺度效应研究,国家重点研发计划纳米科技专项青年项目,2016-2021,参与。

4. 基于硫系化合物的类神经元突触的认知存储器件研究,国家自然科学基金面上项目,2014-2017,参与。

期刊论文:

1. Yi Li, Ya-Xiong Zhou, Lei Xu, Ke Lu, Zhuo-Rui Wang, Nian Duan, Long Cheng, Ting-Chang Chang, Kuan-Chang Chang, Hua-Jun Sun, Kan-Hao Xue and Xiang-Shui Miao*, Realization of Functional Complete Stateful Boolean Logic in memristive crossbar array, ACS Applied Materials & Interfaces, DOI: 10.1021/acsami.6b11465, 2016.

2. Yang Zhang, Xiaoping Wang*,Yi Li, and Eby G. Friedman, Memristive model for synaptic circuits, IEEE Transactions on Circuits and Systems II: Express Briefs, DOI 10.1109/TCSII.2016.2605069, 2016.

3. J. J. Zhang, H. Liu, H. J. Sun*, P. Yan,Y. Li, S. J. Zhong, S. Xie, R. J. Li, and X. S. Miao, Charged defects-induced resistive switching in Sb2Te3memristor, Journal of Electronic Materials, 45(2), 1154-1159 (2016).

4. Y. X. Zhou,Y. Li, L. Xu, S. J. Zhong, R. G. Xu, and X. S. Miao*, A hybrid memristor-CMOS XOR gate for nonvolatile logic computation, Physica Status Solidi A: Applications and Materials Science, 213(4), 1050-1054 (2016).

5. J. T. Yu,Y. Li, X. M. Mu, J. J. Zhang, X. S. Miao, and S. N. Wang*, “Modeling the AgInSbTe memristor”, Radioengineering, 24(3), 808-813 (2015).

6. P. Yan,Y. Li, Y. J. Hui, S. J. Zhong, Y. X. Zhou, L. Xu, N. Liu, H. Qian, H. J. Sun*, X. S. Miao, Conducting mechanism of forming-free TiW/Cu2O/Cu memristive devices, Applied Physics Letters, 107, 083501 (2015).

7. Y. P. Zhong,Y. Li, L. Xu, and X. S. Miao*, Simple square spikes for implementing spike-timing-dependent plasticity in phase-change memory,Physica status solidi (RRL) – Rapid Research Letters, 9(7): 414-419 (2015).

8. Y. Li, L. Xu, Y. P. Zhong, Y. X. Zhou, S. J. Zhong, Y. Z. Hu, L. O. Chua, and X. S. Miao*, “Associative learning with temporal contiguity in a memristive circuit for large-scale neuromorphic networks”,Advanced Electronic Materials,1(8), 1500125 (2015).

9. Y. X. Zhou,Y. Li, L. Xu, S. J. Zhong, H. J. Sun, and X. S. Miao*, “16 Boolean logics in three steps with two anti-serially connected memristors”,Applied Physics Letters, 106, 233502 (2015).

10. L. Xu,Y. Li,N. N. Yu, Y. P. Zhong, and X. S. Miao*, “Local order origin of thermal stability enhancement of amorphous Ag doping GeTe”,Applied Physics Letters, 106, 031904 (2015).

11. Y. Li, Y. P. Zhong, J. J. Zhang, L. Xu, Q. Wang, H. J. Sun, H. Tong, X. M. Cheng and X. S. Miao*, Activity-dependent synaptic plasticity of a chalcogenide electronic synapse for neuromorphic systems,Scientific Reports, 4, 4906 (2014).

12. Y. Li, Y. P. Zhong, L. Xu, J. J. Zhang, X. H. Xu, H. J. Sun, and X. S. Miao*, Ultrafast synaptic events in a chalcogenide memristor,Scientific Reports, 3, 1619 (2013).

13. Y. Li, Y. P. Zhong, J. J. Zhang, X. H. Xu, Q. Wang, L. Xu, H. J. Sun, and X. S. Miao*, Intrinsic memristance mechanism of crystalline stoichiometric Ge2Sb2Te5,Applied Physics Letters, 103, 043501 (2013).

14. Y. Li, Y. P. Zhong, Y. X. Zhou, Y. F. Deng, L. Xu, and X. S. Miao*, AND, OR, NOT Boolean logic in phase change memory,Journal ofApplied Physics, 114, 234503 (2013).

15. J. J. Zhang, H. J. Sun*,Y. Li, Q. Wang, X. H. Xu, and X. S. Miao, AgInSbTe memristor with gradual resistance tuning,Applied Physics Letters, 102, 183513 (2013).

16. X. M. Long, X. S. Miao*, J. J. Sun, X. M. Cheng, H. Tong,Y. Li, D. H. Yang, J. D. Huang, and C. Liu, Dynamic switching characteristic dependence on sidewall angle for phase change memory,Solid-State Electronics, 67, 1 (2012).

Dr. Yi LI

Lecturer

School of Optical and Electronic Information

Huazhong University of Science and Technology

430074, Wuhan, P.R. China.

Phone: (86)27-87792692

Email: liyi@hust.edu.cn

Academic Areas: Memristor, resistive random access memory(RRAM). Develop novel electronic devices that capable of information storage and processing, such as electronic synaptic devices, nonvolatile logic devices, and their related physics, functions and applications.

Academic Degrees

PhD in Microelectronics and Solid State Electronics, 2014, Huazhong University of Science and Technology;

BA in Electronic Science and Technology, 2009, Huazhong University of Science and Technology.

Professional Experience

Huazhong University of Science & Technology, School of Optical and Electronic information, Lecturer (2015.03-present);

National Sun Yat-sen University, Taiwan, Department of Physics, Visiting scholar, (2016.04-2016.08);

Huazhong University of Science & Technology, School of Optical and Electronic information, Research assistant (2014-2015.02);

.

Selected Publications

1. Yi Li, Ya-Xiong Zhou, Lei Xu, Ke Lu, Zhuo-Rui Wang, Nian Duan, Long Cheng, Ting-Chang Chang, Kuan-Chang Chang, Hua-Jun Sun, Kan-Hao Xue and Xiang-Shui Miao*, Realization of Functional Complete Stateful Boolean Logic in memristive crossbar array, ACS Applied Materials & Interfaces, DOI: 10.1021/acsami.6b11465, 2016.

2. Yang Zhang, Xiaoping Wang*,Yi Li, and Eby G. Friedman, Memristive model for synaptic circuits, IEEE Transactions on Circuits and Systems II: Express Briefs, DOI 10.1109/TCSII.2016.2605069, 2016.

3. J. J. Zhang, H. Liu, H. J. Sun*, P. Yan,Y. Li, S. J. Zhong, S. Xie, R. J. Li, and X. S. Miao, Charged defects-induced resistive switching in Sb2Te3memristor, Journal of Electronic Materials, 45(2), 1154-1159 (2016).

4. Y. X. Zhou,Y. Li, L. Xu, S. J. Zhong, R. G. Xu, and X. S. Miao*, A hybrid memristor-CMOS XOR gate for nonvolatile logic computation, Physica Status Solidi A: Applications and Materials Science, 213(4), 1050-1054 (2016).

5. J. T. Yu,Y. Li, X. M. Mu, J. J. Zhang, X. S. Miao, and S. N. Wang*, “Modeling the AgInSbTe memristor”, Radioengineering, 24(3), 808-813 (2015).

6. P. Yan,Y. Li, Y. J. Hui, S. J. Zhong, Y. X. Zhou, L. Xu, N. Liu, H. Qian, H. J. Sun*, X. S. Miao, Conducting mechanism of forming-free TiW/Cu2O/Cu memristive devices, Applied Physics Letters, 107, 083501 (2015).

7. Y. P. Zhong,Y. Li, L. Xu, and X. S. Miao*, Simple square spikes for implementing spike-timing-dependent plasticity in phase-change memory,Physica status solidi (RRL) – Rapid Research Letters, 9(7): 414-419 (2015).

8. Y. Li, L. Xu, Y. P. Zhong, Y. X. Zhou, S. J. Zhong, Y. Z. Hu, L. O. Chua, and X. S. Miao*, “Associative learning with temporal contiguity in a memristive circuit for large-scale neuromorphic networks”,Advanced Electronic Materials,1(8), 1500125 (2015).

9. Y. X. Zhou,Y. Li, L. Xu, S. J. Zhong, H. J. Sun, and X. S. Miao*, “16 Boolean logics in three steps with two anti-serially connected memristors”,Applied Physics Letters, 106, 233502 (2015).

10. L. Xu,Y. Li,N. N. Yu, Y. P. Zhong, and X. S. Miao*, “Local order origin of thermal stability enhancement of amorphous Ag doping GeTe”,Applied Physics Letters, 106, 031904 (2015).

11. Y. Li, Y. P. Zhong, J. J. Zhang, L. Xu, Q. Wang, H. J. Sun, H. Tong, X. M. Cheng and X. S. Miao*, Activity-dependent synaptic plasticity of a chalcogenide electronic synapse for neuromorphic systems,Scientific Reports, 4, 4906 (2014).

12. Y. Li, Y. P. Zhong, L. Xu, J. J. Zhang, X. H. Xu, H. J. Sun, and X. S. Miao*, Ultrafast synaptic events in a chalcogenide memristor,Scientific Reports, 3, 1619 (2013).

13. Y. Li, Y. P. Zhong, J. J. Zhang, X. H. Xu, Q. Wang, L. Xu, H. J. Sun, and X. S. Miao*, Intrinsic memristance mechanism of crystalline stoichiometric Ge2Sb2Te5,Applied Physics Letters, 103, 043501 (2013).

14. Y. Li, Y. P. Zhong, Y. X. Zhou, Y. F. Deng, L. Xu, and X. S. Miao*, AND, OR, NOT Boolean logic in phase change memory,Journal ofApplied Physics, 114, 234503 (2013).

15. J. J. Zhang, H. J. Sun*,Y. Li, Q. Wang, X. H. Xu, and X. S. Miao, AgInSbTe memristor with gradual resistance tuning,Applied Physics Letters, 102, 183513 (2013).

16. X. M. Long, X. S. Miao*, J. J. Sun, X. M. Cheng, H. Tong,Y. Li, D. H. Yang, J. D. Huang, and C. Liu, Dynamic switching characteristic dependence on sidewall angle for phase change memory,Solid-State Electronics, 67, 1 (2012).

华中科技大学  光学与电子信息学院  联系电话:027-87558726  邮编:430074 地址:中国•湖北省武汉市珞喻路1037号 华中科技大学南五楼六楼