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薛堪豪

作者: 时间:2017-03-18 点击数:

姓 名:薛堪豪

职称:副教授

专业方向:微电子学系

Email:xkh@hust.edu.cn

办公地点:光电国家研究中心B407

本科与硕士分别毕业于清华大学电子工程系和清华大学微电子学研究所,获2007年清华大学优秀硕士毕业生。2010年5月获美国科罗拉多大学科泉分校博士学位(科罗拉多大学优秀毕业生)。博士期间发表的氧化镍基关联电子存储器的模型被国际半导体技术发展路线图ITRS引用,作为Mott存储器的一种原型。曾在科罗拉多大学科泉分校担任讲师,教授《半导体器件》课程。先后在美国科罗拉多大学,法国格勒诺布尔微电子电磁与光电研究所(IMEP-LAHC),法国亚眠固态反应与化学实验室(LRCS)进行博士后研究。2015年6月进入华中科技大学工作,主讲本科生《量子力学》课程,并入选湖北省教育厅“楚天学者”人才计划。主要从事以下方面的研究:(1)新型非易失性存储器的材料设计与器件建模;(2)新型能带计算方法的研究;(3)电化学系统例如先进二次电池(锂离子电池、锂空气与锂硫电池)的建模,电催化反应机理探索等。在Physical Review Letters, Applied Physics Letters, IEEE Transactions on Electron Devices, Journal of the Electrochemical Society等国际期刊上发表了50篇论文,在谷歌学术上引用次数为573次。2018年提出了改进的基于密度泛函理论的半导体能带计算方法shLDA-1/2。主持了国家自然科学基金项目“共价半导体的高效密度泛函带隙修正”,并作为骨干参与多项科技部国家重点研发计划。

代表性论文:

1.K.-H. Xue*, J.-H. Yuan, L. R. C. Fonseca*, and X.-S. Miao*,Improved LDA-1/2 method for band structure calculations in covalent semiconductors,Computational Materials Science,153, 493 (2018).提出了新型能带计算方法shLDA-1/2.

2.K.-H. Xue, H.-L. Su, Y. Li, H.-J. Sun, W.-F. He, T.-C. Chang*, L. Chen*, D. W. Zhang, and X.-S. Miao*,Model of dielectric breakdown in hafnia-based ferroelectric capacitors,Journal of Applied Physics 124, 024103 (2018).入选Editor’s Pick.

3.H.-X. Zheng, T.-C. Chang*,K.-H. Xue*, Y.-T. Su, C.-H. Wu, C.-C. Shih, Y.-T. Tseng, W.-C. Chen, W.-C. Huang, C.-K. Chen, X.-S. Miao, and S. M. Sze,Reducing forming voltage by applying bipolar incremental step pulse programming in a 1T1R structure resistance random access memory,IEEE Electron Device Letters 39, 815 (2018).

4.L. Lv, Z. Li,K.-H. Xue*, Y. Ruan, X. Ao, H. Wan, X. Miao, B. Zhang, J. Jiang, C. Wang*, and K. Ostrikov,Tailoring the electrocatalytic activity of bimetallic nickel-iron diselenide hollow nanochains for water oxidation,Nano Energy 47, 275 (2018).

5.J. Yuan, N. Yu, J. Wang,K.-H. Xue*, and X. Miao,Design lateral heterostructure of monolayer ZrS2and HfS2from first principles calculations,Applied Surface Science 436, 919 (2018).

6.K.-H. Xue* and X.-S. Miao*,Oxygen vacancy chain and conductive filament formation in hafnia,Journal of Applied Physics 123, 161505 (2018).

7.Z.-H. Wu,K.-H. Xue* and X.-S. Miao,Filament-to-dielectric band alignments in TiO2and HfO2resistive RAMs,Journal of Computational Electronics 16, 1057 (2017).

8.K.-H. Xue, L. R. C. Fonseca, and X.-S. Miao*,Ferroelectric fatigue in layered perovskites from self-energy corrected density functional theory,RSC Advances7, 21856 (2017).

9.J. Yuan, N. Yu,K. Xue*, and Xiangshui Miao,Stability, electronic and thermodynamic properties of aluminene from first-principles calculations,Applied Surface Science 409, 85 (2017).

10.J. Yuan, N. Yu,K. Xue*, and X. Miao,Ideal strength and elastic instability in single-layer 8-Pmmnborophene,RSC Advances7, 8654 (2017).

11.K.-H. Xue, E. McTurk, L. Johnson, P. G. Bruce, and A. A. Franco*,A comprehensive model for non-aqueous lithium air batteries involving different reaction mechanisms,Journal of The Electrochemical Society 162(4), A614 (2015).

12.K.-H. Xue*, B. Traoré, P. Blaise, L. R. C. Fonseca, E. Vianello, G. Molas, B. De Salvo, G. Ghibaudo, B. Magyari-Köpe and Y. Nishi,A combinedab initioand experimental study on the nature of conductive filaments in Pt/HfO2/Pt resistive random access memory,IEEE Transactions on Electron Devices 61(5), 1394 (2014).

13.K.-H. Xue, T.-K. Nguyen and A. A. Franco*,Impact of the cathode microstructure on the discharge performance of lithium air batteries: A multiscale model,Journal of The Electrochemical Society 161(8), E3028 (2014).

14.A. A. Franco* andK.-H. Xue*,Carbon-based electrodes for lithium air batteries: scientific and technological challenges from a modeling perspective,ECS Journal of Solid State Science and Technology2(10), M3084 (2013).为该期刊被引用次数最多的论文.

15.K.-H. Xue*, P. Blaise, L. R. C. Fonseca, G. Molas, E. Vianello, B. Traoré, B. De Salvo, G. Ghibaudo and Y. Nishi,Grain boundary composition and conduction in HfO2: Anab initiostudy,Applied Physics Letters 102,201908 (2013).

16.K.-H. Xue*, P. Blaise, L. R. C. Fonseca and Y. Nishi,Prediction of semimetallic tetragonal Hf2O3and Zr2O3from first principles,Physical Review Letters 110,065502 (2013).

17.K.-H. Xue*and G. L. Plett*,A convective transport theory for high rate discharge in lithium ion cells,Electrochimica Acta 87, 575 (2013).

18.K.-H. Xue*, C. A. Paz de Araujo, J. Celinska and C. McWilliams,A non-filamentary model for unipolar switching transition metal oxide resistance random access memories,Journal of Applied Physics 109, 091602 (2011).

19.K.-H. Xue*, C. A. Paz de Araujo and J. Celinska,A comparative study on Bi4Ti3O12and Bi3.25La0.75Ti3O12ferroelectric thin films derived by metal organic decomposition,Journal of Applied Physics 107, 104123 (2010).

20.K.-H. Xue*, J. Celinska and C. A. Paz de Araujo,Low temperature preparation of ferroelectric bismuth titanate thin films,Applied Physics Letters 95, 052908 (2009).

Dr. Kanhao Xue received the B.S.E.E. degree and the M.S.E.E. degree from Tsinghua University, Beijing, China in 2004 and 2007, respectively. He obtained the Ph.D. degree from University of Colorado Colorado Springs, USA, in May 2010. He taught the course "Semiconductor Devices I" in fall 2010 semester at University of Colorado Colorado Springs. He also had post doctoral experiences in University of Colorado Colorado Springs, USA (2010-2011), Institut de Microélectronique Electromagnétisme et Photonique—Laboratoire d'Hyperfréquences et de Caractérisation (IMEP-LAHC, CNRS), Grenoble, France (2011-2013), and Laboratoire de Réactivitéet Chimie des Solides (LRCS, CNRS), Amiens, France (2013-2015). He became an associate professor in School of Optical and Electronic Information, HUST in June 2015. His research areas cover emerging non-volatile memory devices, such as resistive memory (RRAM) and ferroelectric memory (FeRAM), new methods in first-principles calculations and modeling of electrochemical systems. He has authored 32 publications in international journals, including Physical Review Letters, Applied Physics Letters, Journal of Applied Physics, IEEE Transactions on Electron Devices, Journal of the Electrochemical Society, etc. He was an active member of the Electrochemical Society (ECS) and is a member of International Society of Electrochemistry (ISE). In 2018 he has proposed an improved band structure calculation method shLDA-1/2 for covalent semiconductors.

Academic Areas:

1. Device physics and material design of novel non-volatile memories;

2. New ab initio calculation methods capable of handling hundreds of atoms while predicting a correct band gap.

3. Modeling of advanced battery systems and electrocatalysis;

Academic Degrees

Ph.D. in Electrical Engineering, 2010, University of Colorado Colorado Springs.

Master in Microelectronics, 2007, Tsinghua University.

Bachelor in Electronics Engineering, 2004, Tsinghua University.

Professional Experience

2015.6—Present Associate Professor of HUST

2013.6—2015.5 Post-doctor in LRCS, Amiens, France

2011.10—2013.5 Post-doctor in IMEP-LAHC, MINATEC, Grenoble, France

2010.8—2011.9 Post-doctor in University of Colorado, Colorado Springs, USA

2010.5—2011.9 Staff engineer in Symetrix Corporation, USA

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