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李震

作者: 时间:2017-03-18 点击数:

姓 名:李震

职称:高级工程师

专业方向:微电子学系

个人简介:

职称:高级工程师

研究所(实验室):微电子学系

学习工作经历:

1987年毕业于华中理工大学,2000年在华中科技大学材料物理与化学专业获硕士学位,2006年在华中科技大学微电子学与固体电子学获工学博士学位。目前,在华中科技大学光学与电子信息学院微电子学系信息存储材料及器件研究所从事本科生和研究生教学、科研工作。

研究方向、领域:

微电子学与固体电子学

信息存储材料、器件及芯片系统

光存储器件

电子器件测试技术

大规模集成电路测试技术

主要成果:

主要从事信息存储材料、器件和芯片研究,包括相变随机存储器、光存储、阻变随机存储器、忆阻器等,以及相应的存储器件测试技术,参与了国家863重大项目子课题,国家863面上项目,国家国际科技合作项目,湖北省重大科技攻关项目等。发表论文三十多篇,获授权专利六项。

联系方式:

电话:027-87559364

Email: lizhen@mail.hust.edu.cn

办公地点:西一楼136

CV

Zhen Li

Senior Engineer

Phone: (86)27-87559364

Email: lizhen@mail.hust.edu.cn

Dr. Zhen Li graduated from Huazhong University of Science and Technology in 2006, awarded with a PhD. Now he is the senior engineer of microelectronics at School of Optical and Electronic Information in Huazhong University of Science and Technology. His interests include materials, devices and system-on-chip of data storage, photonic memory devices, micro- and nano-devices measurement and VLSI testing etc.

Academic Areas: Microelectronics and solid-state electronics

Materials, devices and system-on-chip of data storage

Photonic memory devices

Electronic devices measurement

VLSI testing

Selected Publications

(1) Teng Luo, Zhen Li, Qiang He, Xiangshui Miao. Pr-based metallic glass films used as resist for phase-change lithography. OPTICS EXPRESS, 24(6):5754-5762(2016)

(2) Wei Zhou, Zhen Li*, Qiang He, Xiang-shui Miao. Modeling of transient thermal dissipation of nanoscale phase-change memory cells in the pulse domain. International Journal of Heat and Mass Transfer, 94 :301–305 (2016)

(3) Ri Wen Ni, Bi Jian Zeng, Jun Zhu Huang, Teng Luo, Zhen Li*, Xiang Shui Miao, Exposure strategy and crystallization of Ge-Sb-Te thin film by maskless phase-change lithography, Optical Engineering 54(4), 045103 (April 2015).

(4) Zeng BJ,Huang JZ,Ni RW,Yu NN,Wei W,Hu YZ,Li Z,Miao XS, Metallic resist for phase-change lithography, Scientific Reports (Nature Publishing Group), volume 4, 5300, 2014.

(5) Q. He, Z. Li*, J. H. Peng, Y. F. Deng, B. J. Zeng, W. Zhou, and X. S. Miao, Continuous controllable amorphization ratio of nanoscale phase change memory cells, Applied Physics Letters, 104, 223502, 2014.

(6) Bi Jian Zeng, Ri Wen Ni, Jun Zhu Huang, Zhen Li*and Xiang Shui Miao, Polarization-based multiple-bit optical data storage, J. Opt. 16(2014) 125402 (7pp).

(7) Deng Y. F.,Li Z*.,Peng J. H., Liu C., Chen W.,Miao X.S.,Thermal dispersion and secondary crystallization of phase change memory cells, Applied Physics Letters, 103(23), 233501, 2013.

(8) P. Wang, C. Ju, W. Chen, D. Q. Huang, X. W. Guan, Z. Li, X. M. Cheng, and X. S. Miao, Picosecond amorphization of chalcogenides material: From scattering to ionization,Applied Physics Letters,102(11), 112108, 2013.

(9) Chen W, Li Z*, Peng JH, Deng YF, Miao XS, Intrinsic threshold mechanism of phase-change memory cells by pulsed current–voltage characterization, Applied Physics Letters, 101(14), 142107, 2012.

(10) Huang DQ, Miao XS, Li Z, Sheng JJ, Sun JJ, Peng JH, Wang JH, Chen Y, Long XM, Nonthermal phase transition in phase change memory cells induced by picosecond electric pulse, Applied Physics Letters, Volume: 98, Issue: 24, Article Number: 242106, JUN 13 2011

(11) L.W. Qu, X.S. Miao, J.J. Sheng, Z. Li, J.J. Sun, P.An, Jiandong Huang, Daohong Yang, Chang Liu, SET/RESET properties dependence of phase-change memory cell on thickness of phase-change layer, Solid-State Electronics 56 (2011) 191–195.

Courses Taught

Measurement technologies of electronic materials and devices

Theory and technology of information thin films

Test methodology of very large scale integrated circuits

华中科技大学  光学与电子信息学院  联系电话:027-87558726  邮编:430074 地址:中国•湖北省武汉市珞喻路1037号 华中科技大学南五楼六楼